![]() ![]() ![]() CuI is consisted of abundant elements and can be synthesised at low temperatures, which enables various applications on flexible plastic substrates 13, 14. Among them, copper(I) iodide (CuI) is regarded the most promising candidate owing to its high intrinsic Hall mobility over 40 cm 2 V −1 s −1, high optical transparency with a wide bandgap ( E g) of ~3 eV, and high doping capacity with a significant p-type conductivity 11, 12. To overcome the poor band dispersion of VBM with small oxide anions, alternative inorganic materials with large and easily polarisable anions have been investigated as novel p-type transparent semiconductors 10. Therefore, the search for transparent p-type semiconductors beyond oxides with excellent hole-transport properties and low-temperature synthesis techniques has attracted considerable interest in recent years. Although the concept of chemical modulation of the valence band was effective for fabricating new transparent p-type materials, such as CuMO 2 delafossites (M = Al, In, Ga, etc.) and LnCuOCh oxychalcogenides (Ln = lanthanide, Ch = chalcogen) 2, 9, the low hole mobilities or high carrier concentrations and high deposition temperatures (>700 ☌) make them unsuitable for transistor applications. The poor electrical properties originate from their inherent drawbacks of localised hole transport path (i.e., oxygen 2 p orbitals) in the valence band maximum (VBM) and strong self-compensation during the doping 6, 7, 8. However, considering the industrial requirements of high mobility and optical transmittance, despite the extensive studies, the reported p-type metal-oxide semiconductors still exhibit insufficient performance 5. Since the commercialisation of the n-type metal-oxide semiconductor a-InGaZnO ( a-IGZO) for thin-film transistors (TFTs) in flat panel displays in 2011, transparent p-type counterparts have attracted increasing interest for high-performance complementary logic circuits and next-generation ‘invisible’ active-matrix organic light-emitting diode displays 1, 2, 3, 4. This study paves the way for the realisation of transparent, flexible, and large-area integrated circuits combined with n-type metal-oxide semiconductor. The CuI:Zn semiconductors show intrinsic advantages for next-generation TFT applications and wider applications in optoelectronics and energy conversion/storage devices. The optimised TFTs annealed at 80 ☌ exhibit a high hole mobility of over 5 cm 2 V −1 s −1 and high on/off current ratio of ~10 7 with good operational stability and reproducibility. In this study, we propose a doping approach through soft chemical solution process and transparent p-type Zn-doped CuI semiconductor for high-performance TFTs and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. ‘Ideal’ transparent p-type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits.
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